Value chains within the project

The optimization of the Value Chain can be achieved through the integration of the emerging SiC technology and best practice. The SPEED proposal is a clear example, since it includes the development of new SiC substrates and epitaxial layers (WP1); the development and optimization of new efficient semiconductor devices for HV applications (WP2 and 3); novel characterization, package and reliability techniques (WP4); Power Cells with SiC Devices (WP5); and two demonstrators using efficient, medium voltage SiC cells based power converters, for Wind and Solid State Transformer Applications (WP6).

The project has a strong focus on applications and its value chains within the work packages. Therefore, the SPEED partners have identified two so called “value chain cluster” so far:


Figure 1.- The Value Chain Clusters

The Pert diagram describes a flow chart for each targeted application underlying the interdependencies between the WPs to create powerful value chain clusters. SPEED will foster these value chain clusters to improve collaboration within the project beyond the WPs. This requires a multi-disciplinary approach, coupling carefully chosen academic and industrial researchers to work on these scientific and engineering challenges. 


Figure 2.- Pert Diagram

Norstel, Ascatron, FhG IISB and CVUT will investigate SiC substrates and epilayers. For reliable SiC power devices low defeat density material is required. In case of bipolar devices, Stacking Fault free material is also needed. Up to 3.3kV unipolar devices could be the best option while for higher voltage classes; bipolar devices could be more suitable. Moreover and apart from the above considerations, HV (>3.3kV) require specific edge terminations and passivation schemes; therefore, the research and development work on device fabrication has been split into WP2 and WP3. This is the reason why we have identified two value chain clusters that account for the two types of devices and for each targeted application.  Infineon, InfineonAU, LUH, FhG IISB, TUM, Uni Nottingham, ABB CRC, CSIC-CNM, CVUT, Annealsys and Ascatron will develop the respective efficient SiC components (diodes and switches) for the two value chain clusters. Moreover, UNIHB, Uni Nottingham and TUM will develop novel characterisation, reliability and packaging techniques suitable for these SiC devices, which is a common research for both value chain clusters. Uni Oviedo, LUH, Ingeteam and Inael will design and fabricate Power Cells according to the peculiarities of SiC devices (This activity is also common to both applications). Finally, Inael and Enel will fabricate the SST demonstrator and Ingeteam the Wind power demonstrator, respectively. The fundamental specifications of the system and related SiC devices will be done in their respective WPs.

Ultimately, we envision that full prototypes will be realized to show the achievements of the project.